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                |本期目錄/Table of Contents|

                [1]劉英策.TCL+DBR與Ag+DBR倒裝結構LED芯片光電性能比較[J].廈門理工學院學報,2019,27(5):65-70.[doi:1019697/jcnki16734432201905011]
                 LIU Yingce.Comparison of Photoelectric Performance Between TCL+DBR and Ag+DBR Flip Chip LED[J].Journal of JOURNAL OF XIAMEN,2019,27(5):65-70.[doi:1019697/jcnki16734432201905011]
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                TCL+DBR與Ag+DBR倒裝結構LED芯片光電性能比較(PDF)
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                《廈門理工學院學報》[ISSN:1673-4432/CN:35-1289/Z]

                卷:
                27
                期數:
                2019年第5期
                頁碼:
                65-70
                欄目:
                材料科學與工程
                出版日期:
                2019-10-30

                文章信息/Info

                Title:
                Comparison of Photoelectric Performance Between TCL+DBR and Ag+DBR Flip Chip LED
                文章編號:
                16734432(2019)05006506
                作者:
                劉英策
                廈門乾照光電股份有限公司,福建 廈門 361101
                Author(s):
                LIU Yingce
                Xiamen Changelight, Xiamen 361101, China
                關鍵詞:
                LED倒裝芯片TCL+DBR結構Ag+DBR結構光電性能
                Keywords:
                flip chip LED TCL+DBR structure Ag+DBR structure photoelectric performance
                分類號:
                TN3128
                DOI:
                1019697/jcnki16734432201905011
                文獻標志碼:
                A
                摘要:
                為給產業提供有效的參考,在同一的外延結構下,設計了TCL(透明導電層)+DBR(布拉格反射層)和Ag+DBR兩種不同的結構倒裝芯片,并實驗對比兩種結構的光電性能。結果顯示:在500 mA的驅動電流下,相比于TCL+DBR結構的倒裝芯片,Ag+DBR結構倒裝芯片的輸出亮度提升了87%,其飽和電流為132 A,比TCL+DBR結構的倒裝芯片的飽和電流(116 A)高175%;同時,相比于TCL+DBR結構的倒裝芯片,Ag+DBR結構的倒裝芯片顯示出更優的效率衰減性能。輸出亮度、效率衰減性能的提升以及飽和電流的增加,主要歸因于Ag+DBR結構的倒裝芯片具有更佳的熱分布效果、更寬的發光角度和更優的電流擴展效果。
                Abstract:
                TCL (transparent conductive layer) +DBR (Bragg reflector) and Ag+DBR were designed under the same epitaxial structure to compare the photoelectric performance of the two structures The results show that the flip chip LED with Ag+DBR structure improves its output brightness by 87% at 500 mA drive current compared with the flip chip LED with TCL+DBR flip chip, its maximum LOP measured at 132 A is 175% more than that by the flip chip LED with TCL+DBR structured at 116A, and it has lower efficiency droop than flip chip LED with TCL+DBR structure The improvement in output brightness, saturation current and efficiency attenuation performance are mainly attributed to the flip chip with Ag+DBR structure which has the property of better heat distribution effect, wider luminescence angle and better current expansion effect

                參考文獻/References:

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                備注/Memo

                備注/Memo:
                收稿日期:20190311 修回日期:20191018 通信作者:劉英策,男,工程師,碩士,研究方向為LED芯片研發,Email:lyc@changelight.com.cn。
                更新日期/Last Update:
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